IRF520N |
RFQ for IRF520N Required Field |
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| Technical/Catalog Information | IRF520NLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 9.7A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 5.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | TO-262-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF520NLPBF IRF520NLPBF |
| Product | Manufacturers | Pack | D/C |
| IRF520N | - | TO-220 | 05+ |
Features |
| Advanced Process Technology Dynamic dv/dt Rating 175°C Operating TemperatureFast Switching Fully Avalanche Rated |
| Parameter | Max. | Unit | |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 9.7 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 6.8 | |
| IDM | Pulsed Drain Current | 38 | |
| PD @TC = 25°C | Power Dissipation | 48 | W |
| Linear Derating Factor | 0.32 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 91 | mJ |
| IAR | Avalanche Current | 5.7 | A |
| EAR | Repetitive Avalanche Energy | 4.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf*in (1.1N*m) |
